Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

GaN Metal-Semiconductor Field-Effect Transistor Project II

In this paper, we will discuss the modeling and simulation result of GaN MESFET device with our conventional computer added device simulator MEDICI. We will find out material parameter of GaN so that the device characteristics of simulation fit to experimentally built-on device characteristics. Then we will vary some important device parameters such as gate length, channel doping rate, and acti...